Tokyo Electron 3D80-000300-13渦輪分子泵 PDF資料
1.產(chǎn) 品 資 料 介 紹:
中文資料:
Tokyo Electron 3D80-000300-13 渦輪分子泵 是一款專為半導(dǎo)體制造設(shè)備中的高真空工藝環(huán)境設(shè)計(jì)的高性能抽真空設(shè)備,通常集成在 Tokyo Electron(TEL)旗下的真空工藝平臺(tái)中,如蝕刻、沉積、離子注入等系統(tǒng)。以下是該泵的詳細(xì)應(yīng)用領(lǐng)域分析:
一、產(chǎn)品功能概述
類型:高轉(zhuǎn)速渦輪分子泵
功能:在真空腔體中迅速建立并維持高真空(通常在 10?? ~ 10?? Torr 范圍)
特性:
高抽速
低振動(dòng)
可與干式前級(jí)泵聯(lián)動(dòng)
適用于腐蝕性或惰性氣體環(huán)境
二、主要應(yīng)用領(lǐng)域
1. 等離子體蝕刻設(shè)備(Plasma Etcher)
用于維持腔體內(nèi)的穩(wěn)定高真空,確保等離子體均勻形成與反應(yīng)控制。
支持快速抽氣響應(yīng),滿足高通量生產(chǎn)節(jié)奏。
2. CVD/ALD 薄膜沉積設(shè)備
在沉積腔體中保持低壓環(huán)境,避免雜質(zhì)顆粒沉積。
有助于提高膜層純度和表面質(zhì)量。
3. 離子注入設(shè)備(Ion Implanter)
在離子束注入過程中維持超高真空,減少氣體分子與離子的碰撞。
提升摻雜精度,降低器件缺陷率。
4. PVD 蒸鍍/濺射系統(tǒng)
在濺射前快速建立基準(zhǔn)真空。
在過程中保持穩(wěn)定真空以控制蒸發(fā)材料沉積路徑。
5. 測(cè)試與分析設(shè)備
如 SEM、XPS、RIE 等真空依賴型分析儀中,也常配置渦輪分子泵以實(shí)現(xiàn)必要真空度。
英文資料:
The Tokyo Electron 3D80-000300-13 turbomolecular pump is a high-performance vacuum pumping device designed specifically for high vacuum process environments in semiconductor manufacturing equipment. It is typically integrated into vacuum process platforms under Tokyo Electron (TEL), such as etching, deposition, ion implantation, and other systems. The following is a detailed analysis of the application areas of the pump:
1、 Product Function Overview
Type: High speed turbo molecular pump
Function: Quickly establish and maintain high vacuum in the vacuum chamber (usually within the range of 10 ?? to 10 ?? Torr)
characteristic:
High pumping speed
low vibration
Can be linked with the dry front-end pump
Suitable for corrosive or inert gas environments
2、 Main application areas
1. Plasma Etcher
Used to maintain a stable high vacuum inside the cavity, ensuring uniform plasma formation and reaction control.
Support fast pumping response to meet the rhythm of high-throughput production.
2. CVD/ALD thin film deposition equipment
Maintain a low pressure environment in the sedimentation chamber to avoid the deposition of impurity particles.
Helps to improve the purity and surface quality of the film layer.
3. Ion implantation equipment
Maintain ultra-high vacuum during ion beam implantation to reduce collisions between gas molecules and ions.
Improve doping accuracy and reduce device defect rate.
4. PVD evaporation/sputtering system
Quickly establish a reference vacuum before sputtering.
Maintain a stable vacuum during the process to control the deposition path of evaporated materials.
5. Testing and analysis equipment
In vacuum dependent analyzers such as SEM, XPS, RIE, etc., turbo molecular pumps are often configured to achieve the necessary vacuum degree.
2.產(chǎn) 品 展 示
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